Mr. Xuechao Liu was born in 1981. He received the PhD degree in Chinese Academy of Sciences in 2008. He is a full professor and PhD supervisor in Shanghai institute of Ceramics, Chinese Academy of Sciences. His recent research interest focuses on wide band-gap semiconductor materials and devices. He has published more than 90 papers and 30 patents (18 patents authorized). His work has been cited for more than 1000 times by other scientists. He has been in charge of more than 10 important research projects with a total funding over 30 million RMB, including National 863 Plans Funds, The National Natural Science Funds, Chinese Academy of Science Funds, etc.

Education: 

2003-2008:  Shanghai Institute of Ceramics, Chinese Academy of Sciences, PhD. 

1999-2003:  Tongji University, Materials Science & Engineering B.S. 

Professional Experience: 

2016–Now：Shanghai Institute of Ceramics, Chinese Academy of Sciences, Professor, PhD Supervisor, Deputy Director of Artificial Crystal Research Center.

2011-2016:  Shanghai Institute of Ceramics, Chinese Academy of Sciences, Associate Professor, M.S. Supervisor.

2008-2010: University of Warwick, Department of Physics, Research Fellow.　　

Awards and Honors: 

2015: Ten Talent Program of Youth Innovation and Business of Jiading District, Shanghai.

2013: Shanghai Rising-Star

2012: Talent Youth of the Shanghai Institute of Ceramics.

2012: Shanghai JiaDing Leading Talent

2011: Youth Innovation Promotion Association of Chinese Academy of Sciences

2011: One Hundred Talents Program of the Shanghai Institute of Ceramics, Chinese Academy of Sciences.

Research: 

1.     Wide bang-gap semiconductor materials and devices

2.     Diluted magnetic semiconductors and spintronic devices 

3.     Ultra-wide ban-gap semiconductors (AlN single crystal)

Representative Publications: (* corresponding author)

1.       Xue-Chao Liu*, Shi-Yi Zhuo, Wei-Bin Chen, Chong-ChongDai, and Er-Wei Shi, Electrical property study of Ni/Nb conatact to n-type 4H-SiC. Materi. Sci. Forum, 924, 405-408 (2018).

2.       Shiyi Zhuo, Xue-Chao Liu*, Wei Huang, Hai-Kuan Kong, Jun Xin, and Er-Wei Shi, Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals. AIP Advances, 8, 125001-125007 (2018).

3.       Shi-Yi Zhuo, Xue-Chao Liu*, Ting-Xiang Xu, Cheng-Feng Yan, Er-Wei Shi, Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC. AIP Advances, 8, 075130-075136 (2018)

4.       Hua-Jie Wang, Xue-Chao Liu*, Jun Xin, Hai-Kuan Kong, Pan Gao, Er-Wei Shi, Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle, Journal of Electronic Materials, 1-5 (2016).

5.       Ren-Wei Zhou, Xue-Chao Liu*, Fei Li, Er-Wei Shi, Defects Induced Ferromagnetism in Hydrogen Irradiated 3C-SiC Thin Films, Materials Letters, 156, 54-57 (2015).

6.       Ren-Wei Zhou, Xue-Chao Liu*, Hua-Jie Wang, Wei-Bin Chen, Fei Li, Shi-Yi Zhuo, Er-Wei Shi, Ferromagnetism in proton irradiated 4H-SiC single crystal, AIP Advance, 5, 047146 (2015).

7.       Xue-Chao Liu *, Biao Shi, Jun Xin, Hai-Kuan Kong, Xi Liu, Wei Huang, Yan-Qing Zheng, Er-Wei Shi, Study of surface morphologies of on-axis 6H-SiC wafer after high-temperature etching and epitaxial growth, Material Science Forum, 778-780, 197-200 (2014).

8.       Fei Li, Xue-Chao Liu *, Ren-Wei Zhou, Hong-Ming Chen, Shi-Yi Zhuo, and Er-Wei Shi, Strong correlation between oxygen vacancy and ferromagnetism in Yb-doped ZnO thin films, Journal of Applied Physics, 116, 243910 (2014).

9.       Tian-Yu Zhou, Xue-Chao Liu*, Chong-Chong Dai, Wei Huang, Shi-Yi Zhuo, Er-Wei Shi, Effect of interfacial graphite carbon created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC, Materials Sciences and Engineering B, 188, 59-65 (2014).

10.    Chong-Chong Dai, Xue-Chao Liu*, Tian-Yu Zhou, Shi-Yi Zhuo, Hai-Kuan Kong, Jian-Hua Yang and Er-Wei Shi, Effect of annealing temperature on the contact properties of Ni/V/4H-SiC, AIP Advance, 4, 047125-047131 (2014).

11.    Ze Xiong, Xue-Chao Liu*, Shi-Yi Zhuo, Jian-Hua Yang, Er-Wei Shi, Wen-Sheng Yan, Shu-De Yao, Hui-Ping Pan, Influence of Ga doping on the Cr valence state and ferromagnetism in Cr: ZnO films. Appl. Phys. Lett. 102, 022414 (2013).

12.    Hong-Ming Chen, Xue-Chao Liu *, Shi-Yi Zhuo, Ze Xiong, Jian-Hua Yang, Er-Wei Shi, The dual effects of Al-doping on the ferromagnetism of Zn_0.98-yEr_0.02Al_yO thin films, AIP Advance, 3, 082121 (2013).

13.    Biao Shi, Xue-Chao Liu*, Ming-Xing Zhu, Jian-Hua Yang, Er-Wei Shi, Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si (100) substrates by APCVD, Applied Surface Sciences, 259, 685-690 (2012).

14.    Ming-Xing Zhu, Biao Shi, Yi Chen, Xue-Chao Liu*, Jian-Hua Yang, Er-Wei Shi, Influence of surface bow on reconstruction of 2-inch-SiC (0001) wafer, J. Appl. Phys. 111, 023516 (2012).

15.    Ze Xiong, Xue-Chao Liu*, Shi-Yi Zhuo, Jian-Hua Yang, Er-Wei Shi, Oxygen enhanced ferromagnetism in Cr-doped ZnO films. Appl. Phys. Lett. 99, 052513-052515 (2011).

16.    Xue-Chao Liu, M. Myronov, A. Dobbie, et.al. High quality Ge/Si_0.4Ge_0.6 multiple quantum wells for photonic application: growth by reduced pressure chemical vapor deposition and structural characteristics. J. Phys. D: Appl. Phys. 44, 055102 (2011).

17.    Xue-Chao Liu, Zhi-Zhan Chen, Er-Wei Shi, et.al. Structural, optical and electrical properties of Ga-doped and (Ga, Co)-codoped ZnO films. J. Cryst. Growth 312, 2817 (2010).

18.    Xue-Chao Liu, Er-Wei Shi, Zhi-Zhan Chen, et.al. Charge transfer properties and effect of donor localization on the magnetic properties in Zn-Co-O system. Appl. Phys. Lett. 92, 042502 (2008).

19.    Xue-Chao Liu, Er-Wei Shi, Zhi-Zhan Chen, et.al. Effect of oxygen partial pressure on the local structure and magnetic properties of Co-doped ZnO films. J. Phys.: Condens. Matter 20, 025208 (2008).

20.    Xue-Chao Liu, Er-Wei Shi, Zhi-Zhan Chen, et. al. High-temperature ferromagnetism in (Co, Al)-codoped ZnO. Appl. Phys. Lett. 88, 252503 (2006).